【摘要】：The thin film of heat-sensitive materials has been widely concerned with the current trend of miniaturization and integration of sensors. In this work, Mn_(1.56) Co_(0.96) Ni_(0.48) O_4(MCNO) thin films were prepared on Si O_2/Si substrates by sputtering with Mn–Co–Ni alloy target and then annealing in air at different temperatures(650–900 ℃). The X-ray diffraction(XRD) and field emission scanning electron microscopy(FE-SEM) analysis indicated that the main crystalline phase of MCNO thin films was spinel crystal structure; the surface of the thin films was very dense and uniform. The electrical properties of the thin films were studied in the temperature range of –5–50 ℃. The MCNO thin film with a low room temperature resistance R_(25) of 71.1 kΩ and a high thermosensitive constant B value of 3305 K was obtained at 750 ℃. X-ray photoelectron spectroscopy(XPS) analysis showed that the concentration of Mn~(3+) and Mn~(4+) cations in MCNO thin films is the highest when annealing temperature is 750 ℃. The complex impedance analysis revealed internal conduction mechanism of the MCNO thin film and the resistance of the thin film was dominated by grain boundary resistance.