收藏本站
收藏 | 投稿 | 手机打开
二维码
手机客户端打开本文

Thermo-Mechanical Simulation of Self-Heating of a High-Power Diode Made of Ti_3SiC_2(MAX) Phase-on-4H-SiC Substrate

ABOU HAMAD Valdemar  SOUEIDAN Maher  HAMAD Hassan  GREMILLARD Laurent  FABREGUE Damien  ZGHEIB Charbel  ZAATAR Youssef  
【摘要】:The fact that traditional semiconductors have almost reached their performance limits in high power applications,is leading to failure in high power devices.This failure results from self-heating effects,leading to higher temperature and a breakdown of the electrical contact.The good thermal and mechanical properties of 4 H-SiC and Ti_3SiC_2 and their good performance at high temperatures make them good candidates for high power applications.In order to improve the performance of electrical contacts,a thermo-mechanical simulation was carried out using the finite element method to study the self-heating effects in a high power PN diode made of a 4 H-SiC substrate with a Ti_3SiC_2 electrical contact and Al_3Ti metallization.The three-dimensional model took into account the temperature dependency of several thermal and mechanical properties of the different materials to improve calculation accuracy.To simulate the self-heating,the power loss in the diode was calculated from the corresponding direct I-V characteristic.In addition,the interfacial thermal resistances (ITR) between the different layers were varied and studied in the thermo-mechanical investigation,in sequence to determine their effects on the heat dissipation and the resulting stresses in the model.The results show that for realistic ITR values,the ITR barely affects heat diffusion mechanical stresses of the model.Whereas,ITR may cause serious problem to the functionality and the efficiency of some electronic components.On the other hand,extremely large ITR leads to a decrease in the thermal stress in the diode.Good control on the ITR may help to improve the performance of high-power devices in the future,in addition to providing more efficient electrical contacts.

知网文化
【相似文献】
中国期刊全文数据库 前18条
1 李加;董利明;倪辰荫;沈中华;张宏超;;Application of ultrasonic surface waves in the detection of microcracks using the scanning heating laser source technique[J];Chinese Optics Letters;2012年11期
2 邓婉玲;郑学仁;;Modeling of self-heating effects in polycrystalline silicon thin film transistors[J];半导体学报;2009年07期
3 曹全君;张义门;张玉明;;A new physics-based self-heating effect model for 4H-SiC MESFETs[J];Chinese Physics B;2008年12期
4 麻鹏鹏;苏茂根;曹世权;王凯平;韩伟伟;孙对兄;敏琦;董晨钟;;Influence of heating effect in Thomson scattering diagnosis of laser-produced plasmas in air[J];Plasma Science and Technology;2020年08期
5 张东;武辰飞;徐尉宗;任芳芳;周东;于芃;张荣;郑有炓;陆海;;Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors[J];Chinese Physics B;2019年01期
6 陈伟平;田丽;李明江;刘晓为;;Simulation and design of a self-heating continuous-flow PCR chip[J];Journal of Harbin Institute of Technology;2007年02期
7 董全力;张杰;;Vacuum heating of solid target irradiated by femtosecond laser pulses[J];Science in China(Series G);2003年01期
8 Longxiang YIN;Lei SHEN;Hai JIANG;Gang DU;Xiaoyan LIU;;Impact of self-heating effects on nanoscale Ge p-channel Fin FETs with Si substrate[J];Science China(Information Sciences);2018年06期
9 Ridong Wang;Shen Xu;Yanan Yue;Xinwei Wang;;Thermal behavior of materials in laser-assisted extreme manufacturing:Raman-based novel characterization[J];International Journal of Extreme Manufacturing;2020年03期
10 Tianhu Wang;Jinliang Xu;Xiaodong Wang;;Self-heating dependent characteristic of GaN-based light-emitting diodes with and without AlGaInN electron blocking layer[J];Chinese Science Bulletin;2014年20期
11 ;Effects of Behavior of Hot Electrons for Materials and Thickness of Targets[J];Annual Report of China Institute of Atomic Energy;2008年00期
12 张岩;董刚;杨银堂;王宁;丁尧舜;刘晓贤;王凤娟;;A novel interconnect optimal buffer insertion model considering the self-heating effect[J];Journal of Semiconductors;2013年11期
13 Boning Han;Qingsong Shan;Fengjuan Zhang;Jizhong Song;Haibo Zeng;;Giant efficiency and color purity enhancement in multicolor inorganic perovskite light-emitting diodes via heating-assisted vacuum deposition[J];Journal of Semiconductors;2020年05期
14 FAN Aoran;HU Yudong;MA Weigang;WANG Haidong;ZHANG Xing;;Dual-Wavelength Laser Flash Raman Spectroscopy Method for In-Situ Measurements of the Thermal Diffusivity: Principle and Experimental Verification[J];Journal of Thermal Science;2019年02期
15 王翔;周晨;刘默然;倪彬彬;赵正予;;Density disturbance of small-scale fieldaligned irregularities in the ionosphere heating experiments[J];Plasma Science and Technology;2018年12期
16 S.D.Moustaizis;P.Lalousis;H.Hora;Z.Henis;S.Eliezer;I.Ploumistakis;;New scheme to trigger fusion in a compact magnetic fusion device by combining muon catalysis and alpha heating effects[J];High Power Laser Science and Engineering;2016年04期
17 李志明;许晟瑞;张进虎;常永明;倪金玉;周小伟;郝跃;;Finite element analysis of the temperature field in a vertical MOCVD reactor by induction heating[J];半导体学报;2009年11期
18 ;Numerical study of self-heating effects of small-size MOSFETs fabricated on silicon-on-aluminum nitride substrate[J];Nuclear Science and Techniques;2006年01期
中国重要会议论文全文数据库 前4条
1 ;Numerical Simulations of germanium NANOfilm under femtosecond pulse laser heating[A];2011年全国压电和声波理论及器件应用研讨会报告程序册及摘要集[C];2011年
2 ;Multi-Pulse Infrared Thermography Applied to Improve Defect Detectability of Composites in SRM[A];中国光学学会2010年光学大会论文集[C];2010年
3 ;Numerical simulation of thermal runaway in microwave heating in one dimension[A];第十二届全国微波能应用学术会议论文集[C];2005年
4 Ming Chen;Yong Tang;Bo Wang;;Dependence of IGBT Junction-Case Steady State Thermal Resistance on Heating Current[A];proceedings of 2010 3rd International Conference on Computer and Electrical Engineering (ICCEE 2010 no.2)[C];2012年
 快捷付款方式  订购知网充值卡  订购热线  帮助中心
  • 400-819-9993
  • 010-62982499
  • 010-62783978