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Journal of Semiconductors
半导体学报(英文版)
主办: 中国科学院半导体研究所;中国电子学会
周期: 月刊
出版地:北京市
语种: 英文;
开本: 大16开
ISSN 1674-4926
CN 11-5781/TN
邮发代号 2-184
曾用刊名:半导体学报(英文版);半导体学报;Chinese Journal of Semiconductors
创刊年:1980
中国期刊方阵来源刊
ASPT来源刊
中国期刊网来源刊
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Journal of Semiconductors

2019 年01期 目录
Gallium oxide: promise to provide more efficient life Yue Hao;Jincheng Zhang;
Bulk gallium oxide single crystal growth Xutang Tao;
Preface to the Special Issue on Ultra-Wide Bandgap Semiconductor Gallium Oxide: from Materials to Devices Xutang Tao;Jiandong Ye;Shibing Long;Zhitai Jia;
Growth and fundamentals of bulk β-Ga_2O_3 single crystals H.F.Mohamed;Changtai Xia;Qinglin Sai;Huiyuan Cui;Mingyan Pan;Hongji Qi;
Progress of power field effect transistor based on ultra-wide bandgap Ga_2O_3 semiconductor material Hang Dong;Huiwen Xue;Qiming He;Yuan Qin;Guangzhong Jian;Shibing Long;Ming Liu;
A review of the most recent progresses of state-of-art gallium oxide power devices Hong Zhou;Jincheng Zhang;Chunfu Zhang;Qian Feng;Shenglei Zhao;Peijun Ma;Yue Hao;
A review of β-Ga_2O_3 single crystal defects, their effects on device performance and their formation mechanism Bo Fu;Zhitai Jia;Wenxiang Mu;Yanru Yin;Jian Zhang;Xutang Tao;
Application of halide vapor phase epitaxy for the growth of ultrawide band gap Ga_2O_3 Xiangqian Xiu;Liying Zhang;Yuewen Li;Zening Xiong;Rong Zhang;Youdou Zheng;
Temperature-dependent electrical properties of β-Ga_2O_3Schottky barrier diodes on highly doped single-crystal substrates Tsung-Han Yang;Houqiang Fu;Hong Chen;Xuanqi Huang;Jossue Montes;Izak Baranowski;Kai Fu;Yuji Zhao;
β-Ga_2O_3 thin film grown on sapphire substrate by plasmaassisted molecular beam epitaxy Jiaqi Wei;Kumsong Kim;Fang Liu;Ping Wang;Xiantong Zheng;Zhaoying Chen;Ding Wang;Ali Imran;Xin Rong;Xuelin Yang;Fujun Xu;Jing Yang;Bo Shen;Xinqiang Wang;
Source-field-plated Ga_2O_3 MOSFET with a breakdown voltage of 550 V Yuanjie Lü;Xubo Song;Zezhao He;Yuangang Wang;Xin Tan;Shixiong Liang;Cui Wei;Xingye Zhou;Zhihong Feng;
Heteroepitaxial growth of thick α-Ga_2O_3 film on sapphire(0001)by MIST-CVD technique Tongchuan Ma;Xuanhu Chen;Fangfang Ren;Shunming Zhu;Shulin Gu;Rong Zhang;Youdou Zheng;Jiandong Ye;
Current transport mechanism of Mg/Au ohmic contacts to lightly doped n-type β-Ga_2O_3 Jianjun Shi;Xiaochuan Xia;Qasim Abbas;Jun Liu;Heqiu Zhang;Yang Liu;Hongwei Liang;
Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH_3 plasma pretreatment Hui Hao;Xiao Chen;Zhengcheng Li;Yang Shen;Hu Wang;Yanfei Zhao;Rong Huang;Tong Liu;Jian Liang;Yuxin An;Qing Peng;Sunan Ding;
Semiconductor Materials Genome Initiative Suhuai Wei;Junwei Luo;Bing Huang;
Si-Based Materials and Devices Chuanbo Li;Jinsong Xia;Linwei Yu;
Si photocathode Zhijie Wang;
Porous Ni–O/Ni/Si photoanode Dawei Cao;
Detecting forbidden Raman modes Ping-Heng Tan;
Journal of Semiconductors2019年各期:  [01] [02] [03] [04] [05]
Journal of Semiconductors 其它年:   [2018]   [2017]   [2016]   [2015]
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