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Journal of Semiconductors
半导体学报(英文版)
主办: 中国科学院半导体研究所;中国电子学会
周期: 月刊
出版地:北京市
语种: 英文;
开本: 大16开
ISSN 1674-4926
CN 11-5781/TN
邮发代号 2-184
曾用刊名:半导体学报(英文版);半导体学报;Chinese Journal of Semiconductors
创刊年:1980
中国期刊方阵来源刊
ASPT来源刊
中国期刊网来源刊
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Journal of Semiconductors

2019 年12期 目录
Magnetic LEGO: van der Vaals interlayer magnetism Lifeng Yin;
Special Topic on Semiconductor Materials Genome Initiative:New Concepts and Discoveries
Research status and prospects of deep ultraviolet devices Hideki Hirayama;
Laser fabrication of graphene-based soft robots Bing Han;Yong-Lai Zhang;
Ⅲ-nitride based ultraviolet laser diodes Degang Zhao;
Preface to the Special Topic on Deep Ultraviolet Light-Emitting Materials and Devices Jinmin Li;Xinqiang Wang;Dabing Li;Tongbo Wei;
Special Issue on Si-Based Materials and Devices
Deep-ultraviolet integrated photonic and optoelectronic devices:A prospect of the hybridization of group Ⅲ–nitrides, Ⅲ–oxides,and two-dimensional materials Nasir Alfaraj;Jung-Wook Min;Chun Hong Kang;Abdullah A.Alatawi;Davide Priante;Ram Chandra Subedi;Malleswararao Tangi;Tien Khee Ng;Boon S.Ooi;
Recent progress of SiC UV single photon counting avalanche photodiodes Linlin Su;Dong Zhou;Hai Lu;Rong Zhang;Youdou Zheng;
Special Issue on Flexible and Wearable Electronics:from Materials to Applications (1)
The fabrication of AlN by hydride vapor phase epitaxy Maosong Sun;Jinfeng Li;Jicai Zhang;Wenhong Sun;
Growth properties of gallium oxide on sapphire substrate by plasma-assisted pulsed laser deposition Congyu Hu;Katsuhiko Saito;Tooru Tanaka;Qixin Guo;
Special Issue on Flexible and Wearable Electronics:from Materials to Applications (2)
A contrivance of 277 nm DUV LD with B_(0.313)Ga_(0.687)N/B_(0.40)Ga_(0.60)N QWs and Al_xGa_(1–x)N heterojunction grown on AlN substrate Mussaab I.Niass;Muhammad Nawaz Sharif;Yifu Wang;Zhengqian Lu;Xue Chen;Yipu Qu;Zhongqiu Du;Fang Wang;Yuhuai Liu;
Study of the morphology evolution of AlN grown on nanopatterned sapphire substrate Zhuohui Wu;Jianchang Yan;Yanan Guo;Liang Zhang;Yi Lu;Xuecheng Wei;Junxi Wang;Jinmin Li;
Special Topic on 2D Materials and Devices
Hot electron effects on the operation of potential well barrier diodes M.Akura;G.Dunn;M.Missous;
Special Topic on Perovskite Solar Cells
Improved efficiency and photo-stability of methylamine-free perovskite solar cells via cadmium doping Yong Chen;Yang Zhao;Qiufeng Ye;Zema Chu;Zhigang Yin;Xingwang Zhang;Jingbi You;
Special Topic on Devices and Circuits for Wearable and IoT Systems
Analytical model for the effects of the variation of ferrolectric material parameters on the minimum subthreshold swing in negative capacitance capacitor Raheela Rasool;Najeeb-ud-Din;G.M.Rather;
Contact etch process optimization for RF process wafer edge yield improvement Zhangli Liu;Bingkui He;Fei Meng;Qiang Bao;Yuhong Sun;Shaojun Sun;Guangwei Zhou;Xiuliang Cao;Haiwei Xin;
Selection of DBO measurement wavelength for bottom mark asymmetry based on FDTD method Buqing Xu;Qiang Wu;Lisong Dong;Yayi Wei;
Column readout circuit with improved offset mismatch and charge sharing for CMOS image sensor Zhongjie Guo;Ningmei Yu;Longsheng Wu;
Simulation and application of external quantum efficiency of solar cells based on spectroscopy Guanlin Chen;Can Han;Lingling Yan;Yuelong Li;Ying Zhao;Xiaodan Zhang;
A compact two-dimensional analytical model of the electrical characteristics of a triple-material double-gate tunneling FET structure C.Usha;P.Vimala;
Improvement of tunnel compensated quantum well infrared detector Chaohui Li;Jun Deng;Weiye Sun;Leilei He;Jianjun Li;Jun Han;Yanli Shi;
Annual List of Contents to Volume 40
Author Index to Volume 40
Journal of Semiconductors
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