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Journal of Semiconductors
半导体学报(英文版)
主办: 中国科学院半导体研究所;中国电子学会
周期: 月刊
出版地:北京市
语种: 英文;
开本: 大16开
ISSN 1674-4926
CN 11-5781/TN
邮发代号 2-184
曾用刊名:半导体学报(英文版);半导体学报;Chinese Journal of Semiconductors
创刊年:1980
中国期刊方阵来源刊
ASPT来源刊
中国期刊网来源刊
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Journal of Semiconductors

2018 年12期 目录
Structural and thermoelectric properties of copper sulphide powders A.Narjis;A.Outzourhit;A.Aberkouks;M.El Hasnaoui;L.Nkhaili;
Optical absorption via intersubband transition of electrons in GaAs/Al_xGa_(1-x)As multi-quantum wells in an electric field Wenqi Zhang;Zhiping Wang;Shiliang Ban;
Influence of precursor solution concentration on the structural, optical and humidity sensing properties of spray-deposited TiO_2 thin films Dipak L Gapale;Sandeep A Arote;Balasaheb M Palve;Ratan Y Borse;
Boron-rich layer removal and surface passivation of boron-doped p–n silicon solar cells Caixia Hou;Rui Jia;Ke Tao;Shuai Jiang;Pengfei Zhang;Hengchao Sun;Sanjie Liu;Mingzeng Peng;Xinhe Zheng;
Hydrodynamic simulations of terahertz oscillation in double-layer graphene Wei Feng;
Effect of RF power on the structural and optical properties of ZnS thin films prepared by RF-sputtering C.M.Samba Vall;M.Chaik;H.Ait Dads;H.El Aakib;M.Elyaagoubi;M.Aggour;A.Outzourhit;
Visible light photocatalytic dye decomposition behaviour of solid state reaction grown Zn_2TiO_4 nanoparticles Lizina Khatua;Rajashree Sahoo;Pravakar Satapathy;Rudrashish Panda;Susanta Kumar Das;
High infrared transmittance CdS single crystal grown by physical vapor transport Xiaoqing Huo;Huaqing Si;Kun Zhao;Yingwu Zhang;Hongjuan Cheng;Yongkuan Xu;
The effect of oxygen on the epitaxial growth of diamond Meng Gong;Yanan Chen;Wancheng Yu;Peng Jin;Zhanguo Wang;Zhimin Wang;Shenjin Zhang;Feng Yang;Fengfeng Zhang;Qinjun Peng;Zuyan Xu;
Effect of substrate temperature on the physical properties of SnS_2:Cu thin films deposited by spray pyrolysis M.R.Fadavieslam;
Structural and dielectric properties of prepared PbS and PbTe nanomaterials A.A.Azab;Azza A.Ward;G.M.Mahmoud;Eman M.El-Hanafy;H.El-Zahed;F.S.Terra;
Electrical contacts to two-dimensional transition-metal dichalcogenides Shuxian Wang;Zhihao Yu;Xinran Wang;
Analysis and performance exploration of high performance(HfO_2) SOI FinFETs over the conventional(Si_3N_4) SOI FinFET towards analog/RF design Neeraj Jain;Balwinder Raj;
Static performance model of GaN MESFET based on the interface state Xiaohong Li;Ruirong Wang;Tong Chen;
Simulation study of a 4H-SiC lateral BJT for monolithic power integration Shiwei Liang;Jun Wang;Fang Fang;Linfeng Deng;
Influence of well doping on the performance of UTBB MOSFETs Yuqi Ren;Shizhen Huang;Lei Shen;Xiaoyan Liu;Gang Du;
Effect of phosphor sedimentation on photochromic properties of a warm white light-emitting diode Yunyi Zhuang;Yong Wang;Liping Wang;Zhanguo Li;Wenbo Li;Lei Yang;Jun Zou;
The influence of MBE and device structure on the electrical properties of GaAs HEMT biosensors Jiaming Luo;Min Guan;Yang Zhang;Liqiang Chen;Yiping Zeng;
Design of a C-band polarization rotator-splitter based on a mode-evolution structure and an asymmetric directional coupler Chen Yuan;Jincheng Dai;Hao Jia;Jianfeng Ding;Lei Zhang;Xin Fu;Lin Yang;
Analysis and parameter extraction of memristive structures based on Strukov's non-linear model A.Avila Garcia;L.Ortega Reyes;
Fabrication, electrical and photovoltaic characteristics of CuInGeSe_4/n-Si diode I.M.El Radaf;A.M.Mansour;G.B.Sakr;
Impact of strained silicon on the device performance of a bipolar charge plasma transistor Sangeeta Singh;
Nonlinear dynamics in a terahertz-driven double-layer graphene diode Wei Feng;Lijuan Shi;
Interfacial passivation of n-ZnO/p-Si heterojunction by CuI thin layer Chao Xiong;Jin Xiao;Lei Chen;Wenhan Du;Weilong Xu;Dongdong Hou;
Experimental research on the relationship between bypass diode configuration of photovoltaic module and hot spot generation Cong Gao;Peng Liang;Huixue Ren;Peide Han;
Model of NBTI combined with mobility degradation Xuezhong Wu;Chenyue Ma;Shucheng Gao;Xiangbin Li;Fu Sun;Lining Zhang;Xinnan Lin;
3D modelling based comprehensive analysis of high-κ gate stack graded channel dual material trigate MOSFET Aadil T.Shora;Farooq A.Khanday;
Experimental comparison of SiC GTO and ETO for pulse power applications Cheng Zeng;Linfeng Deng;Zongjian Li;Jun Wang;
245 GHz subharmonic receiver with on-chip antenna for gas spectroscopy application Yanfei Mao;Shiju E;Klaus Schmalz;J.Christoph Scheytt;
A fast-locking bang-bang phase-locked loop with adaptive loop gain controller Jincheng Yang;Zhao Zhang;Nan Qi;Liyuan Liu;Jian Liu;Nanjian Wu;
A novel power-on-reset circuit for passive UHF RFID tag chip Ang Wang;Lina Yu;Dehua Wu;Shibo Fu;Wanlin Gao;Wan'ang Xiao;
A 0.6-V,69-dB subthreshold sigma–delta modulator Chengying Chen;Hongyi Zhang;
On-chip bias circuit for W-band silicon–germanium power amplifier Shuo Yang;Lijun Zhang;Jun Fu;Xiaobin Zhang;
A congestion-aware OE router employing fair arbitration for network-on-chip Lu Liu;Yadong Sun;Zhangming Zhu;Yintang Yang;
Design of a 3D Wilkinson power divider using through glass via technology Jifei Sang;Libo Qian;Yinshui Xia;Huakang Xia;
An 8–18 GHz power amplifier with novel gain fluctuation compensation technique in 65 nm CMOS Jie Gong;Wei Li;Jintao Hu;Jiao Ye;Tao Wang;
Wet nitrogen oxidation technology and its anisotropy influence on VCSELs Yan He;Xiaoying He;Shuai Hu;Jiale Su;Chong Li;Anqi Hu;Xia Guo;
Optimization of cleaning process parameters to remove abrasive particles in post-Cu CMP cleaning Liu Yang;Baimei Tan;Yuling Liu;Baohong Gao;Chunyu Han;
Effect of organic amine alkali and inorganic alkali on benzotriazole removal during post Cu-CMP cleaning Liu Yang;Baimei Tan;Yuling Liu;Baohong Gao;Yilin Liu;Chunyu Han;Qi Wang;Siyu Tian;
Journal of Semiconductors Volume 39 2018 CONTENTS
Author Index to Volume 39
Journal of Semiconductors2018年各期:  [01] [02] [03] [04] [05] [06] [07] [08] [09] [10] [11] [12]
Journal of Semiconductors 其它年:   [2017]   [2016]   [2015]   [2014]   [2013]   [2012]   [2011]   [2010]   [2000]
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