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| 半导体学报 | | Chinese Journal of Semiconductors | | 主办: 中国科学院半导体研究所;中国电子学会 | | 周期: 月刊 | | 出版地:北京市 | | 语种: 中英 | | 开本: 大16开 | ISSN 0253-4177 | | CN 11-1870/TN | | 邮发代号 2-184 | | 创刊年:1980 | | 中国期刊方阵来源刊 | | ASPT来源刊 | | 中国期刊网来源刊 | | 2004年度核心期刊 | |
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 | PICTS方法研究SI-GaAs中深能级缺陷性质 Investigation of Deep-Level Defects in LEC SI-GaAs by PICTS | | 龚大卫,陆昉,孙恒慧 |  | 硅中与钼有关能级的研究 Study of Energy Levels Related to Mo in Silicon | | 周洁,卢励吾,韩志勇,吴汲安 |  | Ge_xSi_(1-x)/Si应变层超晶格X-射线双晶衍射的运动学研究 Double Crystal X-ray diffraction study of Ge_xSi_(1-x)/Si Strained-Layer Superlattices by Kinematical approach | | 段晓峰,冯国光,王玉田,褚一鸣,刘学锋,盛篪,周国良 |  | ZnSe-ZnS应变超晶格的质量鉴别 Quality Investigation of ZnSe-ZnS Strained-Layer Superlattices | | 江风益,潘传康,范广涵,范希武 |  | 用正偏电容测量研究SBD的界面态 Study on Interface States of SBD by Forward-Bias Capacitance Measurement | | 陈弘毅 |  | Ar~+激光结晶非晶硅膜电学性质研究 Study on Electrical properties of Ar~+ Laser Crystallized a-Si:H Films | | 张向东,黄信凡,陈坤基 |  | 声电输运器件的沟道特性研究 Study on Channel Characteristics of Acoustic Charge Transport Devices | | 邹英寅,凌明芳,陈抗生 |  | SIMNI/SOI结构的高温工艺稳定性 Process Stability of SIMNI/SOI Structure at High Temperatures | | 李金华,林成鲁,林梓鑫,薛才广,邹世昌 |  | μc-Si:H/a-Si:H多层膜的制备及性质 Preparation and Properties of μc-Si:H/a-Si:H Multilayers | | 郑家贵,冯良桓,蔡伟,黄天荃,蔡亚平,罗昭和,周心明 |  | 差值取样谱函数定理及其在研究MOS陷阱弛豫效应方面的应用 Difference Sampling Spectral Function Theorem and Its Applications in Researching Trap Relaxation Effect of MOS Structure | | 许铭真,谭长华,王阳元 |
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