Hot-wire chemical vapor deposition low-loss hydrogenated amorphous silicon waveguides for silicon photonic devices
【摘要】: We demonstrate low-loss hydrogenated amorphous silicon(a-Si:H) waveguides by hot-wire chemical vapor deposition(HWCVD). The effect of hydrogenation in a-Si at different deposition temperatures has been investigated and analyzed by Raman spectroscopy. We obtained an optical quality a-Si:H waveguide deposited at 230°C that has a strong Raman peak shift at 480 cm~(-1), peak width(full width at half-maximum) of 68.9 cm~(-1), and bond angle deviation of 8.98°. Optical transmission measurement shows a low propagation loss of 0.8 dB/cm at the1550 nm wavelength, which is the first, to our knowledge, report for a HWCVD a-Si:H waveguide.
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SWE Z.OO;ANTULIO TARAZONA;ALI Z.KHOKHAR;RAFIDAH PETRA;YOHANN FRANZ;GORAN Z.MASHANOVICH;GRAHAM T.REED;ANNA C.PEACOCK;HAROLD M.H.CHONG;;Hot-wire chemical vapor deposition low-loss hydrogenated amorphous silicon waveguides for silicon photonic devices [J];Photonics Research;2019年02期
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张广军
,顾冬红
,干福熹
,孙真荣
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