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Hot-wire chemical vapor deposition low-loss hydrogenated amorphous silicon waveguides for silicon photonic devices

SWE Z.OO  ANTULIO TARAZONA  ALI Z.KHOKHAR  RAFIDAH PETRA  YOHANN FRANZ  GORAN Z.MASHANOVICH  GRAHAM T.REED  ANNA C.PEACOCK  HAROLD M.H.CHONG  
【摘要】:We demonstrate low-loss hydrogenated amorphous silicon(a-Si:H) waveguides by hot-wire chemical vapor deposition(HWCVD). The effect of hydrogenation in a-Si at different deposition temperatures has been investigated and analyzed by Raman spectroscopy. We obtained an optical quality a-Si:H waveguide deposited at 230°C that has a strong Raman peak shift at 480 cm~(-1), peak width(full width at half-maximum) of 68.9 cm~(-1), and bond angle deviation of 8.98°. Optical transmission measurement shows a low propagation loss of 0.8 dB/cm at the1550 nm wavelength, which is the first, to our knowledge, report for a HWCVD a-Si:H waveguide.

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