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Efficient InGaN-based yellow-light-emitting diodes

FENGYI JIANG  JIANLI ZHANG  LONGQUAN XU  JIE DING  GUANGXU WANG  XIAOMING WU  XIAOLAN WANG  CHUNLAN MO  ZHIJUE QUAN  XING GUO  CHANGDA ZHENG  SHUAN PAN  JUNLIN LIU  
【摘要】:Realization of efficient yellow-light-emitting diodes(LEDs) has always been a challenge in solid-state lighting.Great effort has been made, but only slight advancements have occurred in the past few decades. After comprehensive work on InGaN-based yellow LEDs on Si substrate, we successfully made a breakthrough and pushed the wall-plug efficiency of 565-nm-yellow LEDs to 24.3% at 20 A∕cm~2 and 33.7% at 3 A∕cm~2. The success of yellow LEDs can be credited to the improved material quality and reduced compressive strain of InGaN quantum wells by a prestrained layer and substrate, as well as enhanced hole injection by a 3 D pn junction with V-pits.

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