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《Science Foundation in China》 2018年03期
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The third kind electronic memory:Fill gap between volatile and non-volatile

【摘要】:正With support by the National Natural Science Foundation of China and Fudan university,the research team led by Prof.Zhou Peng (周鹏)at the State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai,China,bring forward a quasi-non-volatile memory technology with fast writing speed and long refresh time,which was published in Nature Nanotechnology
【分类号】:TP333.8

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