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《Chinese Physics B》 2016年09期
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Pattern dependence in synergistic effects of total dose on single-event upset hardness

郭红霞  丁李利  肖尧  张凤祁  罗尹虹  赵雯  王园明  
【摘要】:The pattern dependence in synergistic effects was studied in a 0.18 μm static random access memory(SRAM) circuit.Experiments were performed under two SEU test environments:3 Me V protons and heavy ions.Measured results show different trends.In heavy ion SEU test,the degradation in the peripheral circuitry also existed because the measured SEU cross section decreased regardless of the patterns written to the SRAM array.TCAD simulation was performed.TIDinduced degradation in n MOSFETs mainly induced the imprint effect in the SRAM cell,which is consistent with the measured results under the proton environment,but cannot explain the phenomena observed under heavy ion environment.A possible explanation could be the contribution from the radiation-induced GIDL in pMOSFETs.
【作者单位】State
【基金】:Project supported by the National Natural Science Foundation of China(Grant No.U1532261)
【分类号】:TP333

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