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《Journal of Electronics(China)》 1984年04期
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EXPERIMENTAL INVESTIGATION OF TRAVELLING WAVE POWER FET WITH COPLANAR SLOW WAVE ELECTRODE SYSTEM

任裕安  阮贵华  
【摘要】:正 Power TW FET(travelling wave field effect transistor)models are built and tested according toa previously derived travelling wave interaction theory.The common drain and gate electrode systemconsisting of coplanar meander slow wave structures are employed.The active length of the deviceis about 3 guided wave length long.With 21 single FETs connecting between the common drainand the gate line,the output power of the model has increased by more than one order in magnitudeas compared to a single FET.A bandwidth of 1:15 and low phase distortion characteristic areobtained.The electric field distribution along the common drain line is then measured and it revealsthat a linear combination of a linear increasing travelling wave and a standing wave exists.The ex-perimental results agree well with the theory.The S parameters of the model show useful results.
【作者单位】Institute

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