Synthesis of In_2S_3 thin films by spray pyrolysis from precursors with different[S]/[In] ratios
【摘要】：Indium sulfide(In2S3/ thin films were prepared by chemical spray pyrolysis technique from solutions with different [S]/[In] ratios on glass substrates at a constant temperature of 250 C. Thin films were characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM), atomic force microscopy(AFM), energy dispersive X-ray spectroscopy(EDS), Raman spectroscopy and optical transmittance spectroscopy. All samples exhibit a polycrystalline structure with a preferential orientation along(0, 0, 12). A good stoichiometry was attained for all samples. The morphology of thin film surfaces, as seen by SEM, was dense and no cracks or pinholes were observed.Raman spectroscopy analysis shows active modes belonging to -ln2S3 phase. The optical transmittance in the visible range is higher than 60% and the band gap energy slightly increases with the sulfur to indium ratio,attaining a value of 2.63 eV for [S]/[In] D 4.5.